SI2303BDS-T1-GE3
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SI2303BDS-T1-GE3 datasheet
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МаркировкаSI2303BDS-T1-GE3
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ПроизводительSiliconix
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ОписаниеVishay Intertechnology SI2303BDS-T1-GE3 Continuous Drain Current Id: -1.49A Drain Source Voltage Vds: -30V On Resistance Rds(on): 150mohm Power Dissipation Pd: 700mW Rds(on) Test Voltage Vgs: -10V Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 1.3 A Resistance Drain-Source RDS (on): 0.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-236-3 Fall Time: 40 ns Minimum Operating Temperature: - 55 C Power Dissipation: 700 mW Rise Time: 40 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 10 ns Part # Aliases: SI2303BDS-GE3
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Количество страниц6 шт.
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Форматы файлаHTML, PDF
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